Simple definition of photovoltaic materials describing TFT Display Module

Optoelectronic material definition optical material is used to manufacture a variety of optical devices (including a variety of active and passive optical sensor optical information processing and storage devices and optical communications, etc.) of the material. Optical materials include infrared materials, laser materials, fiber materials, nonlinear optical materials. OLED Display

Infrared materials are mainly two types of military infrared materials: Materials infrared detection and infrared wave-transparent materials.
Infrared detection materials: infrared detection materials include lead sulfide, antimony, indium, germanium-doped (gold, mercury), tellurium, tin-lead, mercury cadmium telluride, sulfuric three glyptal, tantalum, lithium, germanium, lead acid, magnesium oxide and a series of materials, InSb and HgCdTe infrared photovoltaic systems are currently used in military primary infrared detection materials, especially mercury cadmium telluride (Hg-Cd-Te) materials, is the current national focus on the more mature research and development is the main infrared materials. It can be applied from the near-infrared, mid-infrared, far-infrared to a wide wavelength range, but also having photoconductivity, photovoltaics, and other work photomagnetoelectric manner advantages, but there are also chemical stability of the material is poor, large size single crystal is difficult to be made, a large area defects and poor uniformity, large area array limiting device development, Hg-Cd-Te thin-film material is now in development and application stage, in order to overcome the above disadvantages of the material, the international explore new technical ways:
(1) Preparation of a variety of large-size thin epitaxial wafer, these techniques including molecular beam epitaxy (MBE), liquid phase epitaxy (LPE) and metal organic chemical vapor deposition (MOCVD), etc. Can be prepared by MOCVD, in particular large-area, homogeneous composition, the surface state is good Hg-Cd-Te thin film, for the preparation of large area focal plane array infrared detector. Foreign law has been made by MOCVD area greater than 5cm2, good uniformity, Δx = 0.2 ± 0.005, reproducible process mercury cadmium telluride single crystal thin film, 64 × 64 FPA has been used in model systems, 512 × 512 already sample.
(2) find new high-performance materials to replace the infrared Hg-Cd-Te, including:
① Hg-Mn-Te and Hg-Zn-Te, the United States and Ukraine, and other countries from the mid-1980s has carried out research in this area, studies show, Hg1-xZnxTe and Hg1-(x + y) CdxZnyTe optical properties and cadmium telluride Mercury very similar, but easier to obtain a large size, low defect single crystal, chemical stability is higher. Hg1-xMnxTe is a magnetic semiconductor material in a magnetic field and HgCdTe photovoltaic properties is almost the same, but it overcomes the Hg-Te problems caused by weak bonds. Studies show that the Hg1-xMnxTe, when x <0.35 can be obtained when the composition uniformity, the large size of crystal, the application in the far infrared region, the x-value of about 0.11 should be selected.
② high-temperature superconducting materials, is now in the research and development stage, has developed successful products.
③ Ⅲ-V compound superlattice materials can be used for 8 ~ 14μm infrared detectors, such as: InAs / GaSb (strained layer superlattice), GaAs / AlGaAs (quantum well structure) and so on. I2C Lcd Display
④ SiGe material, due to SiGe material has many unique physical properties and important applications, and is compatible with Si planar process, thus causing the microelectronics and optoelectronics industry's attention. SiGe material by controlling the thickness, composition, strain, etc., can freely adjust the optical properties of materials, opening up a silicon bandgap engineering artificial design and a new era, the formation of an international research boom. Si / GeSi heterostructures used in infrared detectors have the following advantages: cutoff wavelength in the range of 3 ~ 30μm greater adjustment, to ensure a cutoff wavelength of the detector response and help to optimize the cooling requirements. Si / GeSi material has the disadvantage that the quantum efficiency is very low, the current using a plurality of the SiGe layer to solve this problem.