Look through these LED technology Character LCD Modules

p-type region
The p-type doped GaN is an important early distress Character LCD Modules production bottlenecks. This is due to unintentionally doped GaN is n-type electron concentration above 1 × 1016cm-3, p-type GaN is more difficult to achieve. By far the most successful p-type dopant is Mg, but still face high doped lattice damage caused by the main reaction chamber easily passivation problems H elements. Shuji Nakamura of Nichia Corporation invented the oxygen annealing method is simple and effective, is a widely used method of activation by the Lord, but also manufacturers directly by MOCVD activation annealing furnace with nitrogen reign. Nichia's p-GaN quality is the best, probably related to atmospheric pressure MOCVD growth process.
In addition, there are some use p-AlGaN/GaN superlattice, p-InGaN/GaN superlattice reported to increase the hole concentration. However, p-GaN hole concentration and the hole mobility and the n-GaN is still a great difference compared to the electron, which results in a LED asymmetric carrier injection. Generally required in quantum wells near the p-GaN side of the insertion of p-AlGaN electron blocking layer. But between AlGaN and the quantum well region mismatch polarity is considered to be caused by leakage of the main carriers, so recently some manufacturers try and p-InGaAlN instead.

No single-chip white LED phosphor
Mainly uses existing white LED blue COG LCD Display  and yellow phosphor combinations emit white light, this white typical CRI is not high, especially for the red and green reproduction capability is weak. In addition, the phosphor is also facing such as poor reliability, efficiency losses and other issues. Completely dependent on InGaN material as a light emitting region in a single chip to achieve white light from a theoretically feasible.