LED technology and homogeneity of the substrate Si substrate TFT Display Module

Si substrate
Si substrate is seen as reducing the cost of Character LCD Display epitaxial wafers ideal choice because of its large size (8-inch, 12-inch) substrates grown the most mature. However, since the lattice mismatch and thermal mismatch is too large, difficult to control, based on the Si substrate of the LED material quality is relatively poor, and the yield is low, so the Si substrate on the market for LED-based products are very rare. Currently grown on Si LED is mainly used to 6 inches below the substrate main factors to consider yield, based on the actual costs and the LED sapphire substrate compared to the non-dominant. And SiC substrate, the majority of research institutions and manufacturers more popular in electronic devices grown on Si substrates instead of LED. Future of LED epitaxial Si substrate technology should aim at 8 inches or 12 inches this larger substrate.
Homogeneous substrate
As previously mentioned, the LED epitaxial growth is still mainly hetero epitaxial substrate. But the lattice matching and thermal homogeneity matching crystal substrate is still seen as improving the quality and performance of the LED final solution. In recent years, with a hydride vapor phase deposition (HVPE) epitaxial technology, the thickness of the GaN-based substrate, a large area production technology gained in importance, its production method is generally used on a foreign substrate HVPE grown rapidly obtain several tens to hundreds of microns thick GaN material, and then using mechanical, chemical or physical means to a thick layer GaN film was peeled from the substrate, the use of a thick layer of the GaN substrate, the TFT LCD Misplays epitaxial.