Metal oxide technology oled module

This production technology by many manufacturers and professional survey company promising, and that future large-size AMOLED technology route of choice for companies large size sample on display.Character LCD Display
The technology TFT substrate in the process, may be taken common in the LCD industry, the maturation of the large area of ​​the sputtering film formation, oxide, InGaO3 (ZnO) 5, although the electron mobility of this device representing LTPS technology to produce out of the product is low, substantially 10 cm2/V-sec, but this mobility parameter is more than 10 times the amorphous silicon technology devices, the electron mobility of the device is fully able to meet the AMOLED current drive requirements, it can be applied to the OLED driver.
Metal oxide technology is still in the the laboratory validation phase, no real world experience of the excess production, the main factor is its reproducibility and long-term job stability also need to further improve and confirm.
Low-temperature polysilicon (LTPS TFT)
The technology is currently the world's only commercial production verification, a fairly mature production line in G4.5 generation AMOLED production technology.
The main difference of the technical and amorphous silicon technology is the use of laser crystallization of the amorphous silicon film into a polycrystalline silicon, and thus the electron mobility increased from 0.5 to 50-100 cm2/Vs to meet the OLED current drive requirements .
The technology after years of commercial mass production, superior product performance, job stability has been greatly improved in the past few years the amount of production at the same time, the yield rate of about 90%, greatly reducing the product costs.color lcd display module
From the LTPS above process can be seen, and amorphous silicon technology, the main difference is the addition of the laser crystallization process and the ion implantation process, the process is basically the same device there are similarities and amorphous silicon production.
Further, the crystallization technology there are many, the most commonly used small size is Ela the other crystal technology there: SLS YLA, etc., also using some other technology research and development AMOLED TFT substrate, such as metal-induced crystal technology, but also the corresponding samples exhibited, but the main problem of this technology is a metal will lead to the breakdown voltage between the film layer, the leakage current is large, the stability of the device can not be guaranteed (due to the AMOLED device is particularly thin layers between machining assurance level clean to prevent voltage breakdown is important an issue).